摘要
As device density and performance continue to improve, low dielectric constant (k) materials are needed for interlevel dielectric (ILD) applications. The dielectric anisotropy of polymers with low k is an important property to consider for developing ILD. This is on-going research on the integration aspects of Cu-SiLK™ system. In this study, the dielectric anisotropy of SiLK polymer was evaluated with two test structures: the metal-insulator-metal (MIM) parallel capacitor structure for the out-of-phase dielectric constant (k ⊥ ) and comb-and-serpentine interdigitated structure for the in-plane dielectric constant (k ∥ ). A k ⊥ of 2.65, a k ∥ of 2.75, and a dielectric anisotropy of 3.77% were obtained for SiLK. However, SiLK exhibits larger leakage current as compared to amorphous SiO 2 films. The reliability issue on the integration of Cu-SiLK is discussed. © 2007 Elsevier B.V. All rights reserved.