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Dielectric confinement effect in ZnO quantum dots embedded in amorphous SiO2 matrix
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Dielectric confinement effect in ZnO quantum dots embedded in amorphous SiO2 matrix

Yu-Yun Peng, Tsung-Eong HsiehChia-Hung Hsu
Journal of Physics D: Applied Physics, 卷.40(19), 頁碼.6071-6075
10/2007

摘要

Physics and Astronomy (miscellaneous)
The dielectric confinement effect on the blue shift ΔE g (a) of the ZnO quantum dots (QDs) embedded in the SiO 2 matrix is evaluated by applying a multi-shell two-electron system model. The experimental measurement and the calculations of various dielectric structures indicate that the composite matrix structure provides a better estimation of the blue shift of the ZnO QDs-SiO 2 system than the multi-shell structure. The proportionality factor x defined in this work exhibits a dependence of the dielectric confinement energy on the specific dimension ratio (the b/a ratio) and the dielectric constant ε matrix of the outer matrix. The result of the calculation also shows the limit of the two-electron system in estimating the ground-state energy of samples with high dot density. However, the correlation shows the existence of the strong dielectric confinement effect in ZnO QDs-SiO 2 thin films and allows a better understanding of the semiconductor QDs-dielectric systems. © 2007 IOP Publishing Ltd.

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