摘要
Improving charge extraction efficiency and minimizing interfacial recombination losses are critical to enhancing the performance of inverted perovskite solar cells (PSCs). Although copper thiocyanate (CuSCN) exhibits excellent hole transport capability, its interfacial reactivity and poor contact with the perovskite (PVSK) layer result in inefficient hole extraction and severe interfacial recombination, significantly limiting device efficiency and stability. In this study, we present a novel strategy to directly grow a three-dimensional metal–organic framework (MOF), Cu3(HHTP)2, in situ on wet-coated CuSCN films. This approach enables the construction of a hybrid CuSCN/Cu3(HHTP)2 hole transport layer that significantly improves interfacial quality and enhances charge transport characteristics. Experimental results demonstrate that PSCs incorporating this hybrid HTM structure achieve a maximum power conversion efficiency (PCE) of 20.05%, substantially outperforming unmodified CuSCN-based devices (16.10%) and exhibiting superior operational stability.