Abstract
A study was conducted to demonstrate direct synthesis and practical bandgap estimation of multilayer arsenene nanoribbons. The cross-sectional layer structure at nanoscale was monitored by transmission electron microscopy (TEM). The SiO 2 capped on the surface was deposited by an electron beam evaporator to protect the thin film from the damage caused by the focus ion beam (FIB) during the TEM sample preparation. Beyond synthesis of multilayer arsenene, the bandgap of multilayer arsenene was estimated by measuring the photoluminescence (PL) characteristic.