Abstract
The formation of discrete layers of dislocation loops near the projected ion ranges (R p loops) of 65-80 keV, high-dose (5×10 15 -2×10 16 /cm 2 ) P + -implanted (001)Si was observed by cross-sectional transmission electron microscopy (XTEM). Both the energy and dose dependence of the annealing behaviors of R p loops provided strong evidences that they are related to P clustering. The inactivation of dopants due to precipitation, hence the appearance of R p loops, is correlated to the sheet resistance data. The retardation of the solid phase epitaxial growth was shown to be related to the formation of R p loops. Using R p loops as an indicator of changes in point-defect distribution, a combined XTEM and plan-view TEM study was found to be most appropriate for the study of the precipitation process in high-dose P + -implanted silicon.