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Direct synthesis of single-walled carbon nanotubes selectively suspended on tips of vertically aligned silicon nanostructures fabricated by hydrogen plasma etching
Journal article   Peer reviewed

Direct synthesis of single-walled carbon nanotubes selectively suspended on tips of vertically aligned silicon nanostructures fabricated by hydrogen plasma etching

Cheng-Hui Weng, Huan-Chieh Su, Chao-Shun Yang, Kun-Ying Shin, Keh-Chyang Leou and Chuen-Horng Tsai
Nanotechnology, Vol.17(22), pp.5644-5651
28/11/2006

Abstract

Here we present a method to synthesize single-walled carbon nanotubes (SWNTs) selectively suspended on tips of silicon-based nanostructure (Si-ns) templates. The Si-ns templates vertically aligned to the substrates are fabricated via an anisotropic etch process using reactive hydrogen plasmas, in which the etch-resistive nanomasks are the nanosized particles formed by thermal annealing of multi-layered catalytic thin films. After plasma etching, the nanosized self-masks remaining at the tips of the Si-ns directly serve as the catalysts for SWNT growth by thermal chemical vapour deposition. Consequently, the synthesized SWNTs are selectively suspended on the tips of the Si-ns, as revealed by characterizations using scanning electron microscopy and resonance Raman spectroscopy. This methodology provides a simple and straightforward approach to assemble two different nanomaterials, i.e., Si-ns and suspended SWNTs, together as a building block for constructing nanodevices for possible applications. © IOP Publishing Ltd.

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