摘要
Results are reported of direct-write X-ray lithography using a hard X-ray beam focused by a Fresnel zone plate with an outermost zone width of 40nm. An X-ray beam at 7.5keV focused to a nano-spot was employed to write arbitrary patterns on a photoresist thin film with a resolution better than 25nm. The resulting pattern dimension depended significantly on the kind of underlying substrate, which was attributed to the lateral spread of electrons generated during X-ray irradiation. The proximity effect originated from the diffuse scattering near the focus and electron blur was also observed, which led to an increase in pattern dimension. Since focusing hard X-rays to below a 10nm spot is currently available, the direct-write hard X-ray lithography developed in this work has the potential to be a promising future lithographic method.