摘要
Rectifier plays a pivotal role in wireless power transfer systems. While numerous studies have concentrated on enhancing efficiency and bandwidth at specific high-power levels, practical scenarios often involve unpredictable power inputs. Consequently, a distinct need arises for a rectifier that demonstrates superior efficiency across a broad range of input power levels. This paper introduces a high-power RF-to-DC rectifier designed for WPT applications, featuring an ultrawide dynamic range of input power. The rectification process leverages a GaN (gallium nitride) high electron mobility transistor (HEMT) to efficiently handle high power levels up to 12.6 W. The matching circuit was designed to ensure that the rectifier will operate in class-F mode. A Schottky diode is incorporated into the design for relatively lower-power rectification. Seamless switching between the rectification modes of the two circuits is accomplished through the integration of a circulator. The proposed rectifier exhibits a 27.5 dB dynamic range, achieving an efficiency exceeding 55% at 2.4 GHz. Substantial improvement in power handling and dynamic range over traditional rectifiers is demonstrated.