Dual accumulation and depletion behaviors of the arsenic precipitation in low-temperature-grown Be delta-doped GaAs

J.H. Huang; L.Z. Hsieh; X.J. Guo; Y.O. Su

doi:10.1063/1.1536248

期刊文章

Dual accumulation and depletion behaviors of the arsenic precipitation in low-temperature-grown Be delta-doped GaAs

J.H. Huang, L.Z. Hsieh, X.J. Guo 和 Y.O. Su

Applied Physics Letters, 卷.82(2), 頁碼.305-307

01/2003

DOI: https://doi.org/10.1063/1.1536248

摘要

Physics and Astronomy (miscellaneous)

Dual accumulation and depletion behaviors of the arsenic precipitation in low-temperature-grown Be delta-doped GaAs were investigated. The accumulation property always existed on [Be]=1×10 ¹⁴ cm ^-2 -doped planes for the annealing temperatures. The effect of annealing temperature was only on the size of As precipitates.

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題名: Dual accumulation and depletion behaviors of the arsenic precipitation in low-temperature-grown Be delta-doped GaAs
創作者：: J.H. Huang (作者) - National Tsing Hua University
L.Z. Hsieh (作者) - National Defense University
X.J. Guo (作者) - National Taiwan University
Y.O. Su (作者) - National Taiwan University
學術資源類型: 期刊文章
出版日期: 01/2003
出版資訊: Applied Physics Letters, 卷.82(2), 頁碼.305-307
語言: 英語

Dual accumulation and depletion behaviors of the arsenic precipitation in low-temperature-grown Be delta-doped GaAs

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