Abstract
Since the characteristics of the electrode made from Ag paste greatly affect the dielectric properties of (Nb, Ba) doped TiO 2 ceramics, the processing condition, i.e., baking temperature, was investigated. Low melting glass binder contained in Ag paste reacted with TiO 2 ceramics to form an interface layer between Ag electrode and TiO 2 ceramics during baking. The interface layer was identified as Bi 2 Ti 2 O 7 by x-ray diffraction (XRD), and the thickness of the Bi 2 Ti 2 O 7 layer was estimated from line profiles of EPMA and dielectric properties. The interface layers were found to increase with baking temperature. Increased baking temperature lowered the relative dielectric constant and dielectric dissipation factor of TiO 2 ceramics, while it raised the resistivity. Controlling the baking condition of the Ag paste electrode on TiO 2 ceramics resulted in reasonably good dielectric properties and excellent temperature stability.