Abstract
β-SiC (3C-SiC) films were deposited on silicon substrates by electron cyclotron resonance chemical vapor deposition from SiH 4 /CH 4 /H 2 mixtures at 500°C. The crystalline structure and chemical composition of the deposited film were found to depend on the SiH 4 /CH 4 flow ratio. With a sufficient energy supply from microwave power and a SiH 4 /CH 4 flow ratio of 0.5 and lower, stoichiometric SiC could be deposited on Si substrates. Microcrystalline β-SiC was grown at a SiH 4 /CH 4 flow ratio of 0.5, whereas amorphous SiC was obtained at the SiH 4 /CH 4 flow ratios lower than 0.5. When the SiH 4 /CH 4 flow ratio was above 0.5, only polycrystalline Si could be deposited. © 1995 American Institute of Physics.