Abstract
Highly (1 1 1)-oriented (Pb,Ba)ZrO 3 (PBZ) thin films were deposited on BaPbO3(BPO) electrode at different deposition temperatures and different thicknesses. As the deposition temperature increased, the dielectric constant and tunability increased from 150 and 4% to 500 and 56%, respectively. A current transient peak observed prior to dielectric degradation can be related to oxygen vacancy migration (redistribution) with space-charge-limited current transient or modulation of the electric conductivity. We infer that an interfacial layer lying between the PBZ and BPO effectively increases the oxygen vacancy (density ∼10 20 cm -3 ) mobility by Pb 4+ diffusing into the PBZ films. © 2007 IOP Publishing Ltd.