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Effect of deposition pressure on switching field distribution of CoPtCr-SiO2perpendicular magnetic recording thin film media
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Effect of deposition pressure on switching field distribution of CoPtCr-SiO2perpendicular magnetic recording thin film media

David Vokoun, Chih-Huang Lai, Meng-Shian LinRuo-Fan Jiang
IEEE Transactions on Magnetics, 卷.42(10), 頁碼.2396-2398
2006

摘要

Demagnetizing field perpendicular recording media switching field distribution switching volume Electronic Optical and Magnetic Materials Electrical and Electronic Engineering
We studied the effects of the deposition Ar pressure on the switching field distribution (SFD) of Tb/Pt/Ru/CoPtCr-SiO 2 perpendicular media. In this study, we describe a simple method for obtaining parameters of the SFD such as the standard deviation (SD) while taking the effect of demagnetizing field into account. The SFD changed its character greatly with the change of Ar pressure. The differences in the SD of the SFD of various samples may originate from the variation of intergranular exchange and the demagnetizing field due to different Ar pressure. © 2006, IEEE. All rights reserved.

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