Abstract
In this study, optical properties of the nitrogen-doped β-Ga 2 O 3 nanowires (N-doped β-Ga 2 O 3 NWs) were synthesized by exposing β-Ga 2 O 3 NWs under high input power nitrogen plasma (2 kW), using a microwave plasma enhanced chemical vapor deposition (MPECVD) system. The nitrogen contents in the NWs were as-prepared about 7.4, 8.9, 9.7, 13.9, 19.3, and 26.6 at.%, respectively. Low temperature (10 K) cathodoluminescence (CL) spectra exhibit significantly different optical properties for the different nitrogen contents. The CL result of the N-doped β-Ga 2 O 3 NWs (210 s N 2 plasma treatment) exhibited four distinct emission peaks at 378, 516, 759, and 970 nm. The possible light emission mechanism including the effect of the nitrogen dopant was discussed. © 2011 Elsevier B.V. All rights reserved.