摘要
A thorough analysis of the FinFET resistance and current distribution is presented. By combining multiple conventional and novel measurement techniques, the key components that contribute to the parasitic resistance of FinFETs can be quantified. Through a three-dimensional (3D) FinFET resistance network model, the impact of the FinFET 3D structure on the current distribution and parasitic resistance is analyzed. The heterogeneous current distribution, known as the current crowding effect, is also discussed with possible alleviation methods through 3D simulation.