摘要
Molecular-beam-epitaxy (MBE) and atomic-layer-deposition (ALD) high-κ HfO 2 dielectrics have been in-situ deposited on MBE-grown pristine p- and n-In 0.53 Ga 0.47 As(001). The HfO 2 /In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors (MOSCAPs) from both methods all exhibit excellent capacitance-voltage (C-V) characteristics with true inversion and low leakage current densities. Moreover, interfacial trap densities (D it 's) with no discernible peaks at the mid-gap were measured using the temperature-dependent conductance method. Both HfO 2 /InGaAs hetero-structures have exhibited outstanding thermal stabilities to 800°C.