Abstract
The effects of drive-in temperature/time for As + implantation on the electrical properties of metal-oxide-Si (MOS) capacitors are investigated. It is found that As in the gate oxide degrades significantly the stability and reliability of MOS devices. When the drive-in temperature/time is increased, the sheet resistance of the gate electrode is decreased while the changes in the electrical properties of MOS devices become significant. From the results of neutron activation analysis (NAA) of arsenic concentration in various gate oxides, changes in the electrical properties of MOS devices could be attributed to the diffusion of arsenic into the gate oxide and/or the SiO 2 /Si interface.