Abstract
The formation of a two-layer structure and the inhibition of the formation of dislocation loops near the projected ion range (R p ) have been observed by cross-sectional transmission electron microscopy in 80 keV, 1×10 16 and 2×10 16 /cm 2 As + -implanted (001) Si, respectively. The correlations among the arsenic concentration, electrical inactivation of impurity, suppression of the formation of interstitial loops near R p , and retardation of the epitaxial regrowth rate provide significant insight into the point-defect migration and agglomeration during solid phase epitaxial regrowth of implantation amorphous silicon.