Abstract
In this article, the effects of arsenic-ion implanted beam density on defect evolution in polysilicon film have been investigated. The ion implantation by heavy ions, such as arsenic ions, would induce an elevated temperature and positive charge accumulation on the polysilicon surface at a high implanted beam density. The polysilicon resistance linearly increases with the implanted-ion beam density after a subsequent annealing process. Therefore, by optimizing the ion beam density, the surface temperature and charge accumulated potential would be reduced and well-controlled to obtain a stable polysilicon sheet resistance at the gate electrode. © 2010 Elsevier Ltd. All rights reserved.