摘要
The effects of alloy composition on the formation temperature and electrical resistivities of C54 titanium germanosilicide formed during the Ti/Si <sub>1-x</sub> Ge <sub>x</sub> (x = 0, 0.3, 0.4, 0.7, 1) solid state reaction have been investigated. Ti <sub>5</sub> (Si <sub>1-y</sub> Ge <sub>y</sub> ) <sub>3</sub> , C49- and C54-Ti(Si <sub>1-z</sub> Ge <sub>z</sub> ) <sub>2</sub> were observed to form in the Ti/S <sub>1-x</sub> Ge <sub>x</sub> (x≥0.4) systems. On the other hand, Ti <sub>6</sub> (Si <sub>1-y</sub> Ge <sub>y</sub> ) <sub>5</sub> and C54-Ti(Si <sub>1-z</sub> Ge <sub>z</sub> ) <sub>2</sub> were found in the Ti/Si <sub>1-x</sub> Ge <sub>x</sub> (x≧0.7) systems. For both cases, the relationship of x>y>z was found. The appearance and agglomeration temperature of low-resistivity C54-Ti(Si <sub>1-z</sub> Ge <sub>z</sub> ) <sub>2</sub> were both found to decrease with the Ge concentration. The resistivities of C54-Ti(Si <sub>1-z</sub> Ge <sub>z</sub> ) <sub>2</sub> were measured to be 15-20 μΩ/cm. The segregation of Si <sub>1-w</sub> Ge <sub>w</sub> (w>x) was found in all samples annealed above 800°C. The effects of thermodynamic driving force, kinetic factor, and composition of the micro-area are discussed. © 1999 American Institute of Physics.