Abstract
Both plan-view and cross-sectional transmission electron microscopy has been applied to study the effects of implantation species such as P + , As + , BF 2 + and B + on the epitaxial growth of MoSi 2 on (111)Si. A significant improvement in the epitaxial growth of MoSi 2 was found as a result of P + implantation. B + implantation, on the other hand, was not very effective in promoting the growth of MoSi 2 epitaxy on Si. Mechanisms for the improvement in MoSi 2 epitaxy grown on (111)Si by ion implantation are discussed. © 1989.