Abstract
The KrF pulsed excimer laser (248 nm) and the frequency-tripled neodymium doped yttrium aluminum garnet laser (355 nm) have been used to separate GaN thin films from, sapphire substrates and transfer to bond other substrate. However, these processes would increase the dislocation density, resulting in an increase of the leakage current. In this study, the effects of these two laser sources on the reverse-bias leakages of InGaN-GaN light-emitting diodes were studied. © 2007 American Institute of Physics.