Abstract
Nitridation treatments are generally used to enhance the thermal stability and reliability of high-k dielectric. It is observed in this work that, the electrical characteristics of high-k gated MOS devices can be significantly improved by a nitridation treatment using plasma immersion ion implantation (PIII). Equivalent oxide thickness, (EOT) and interface trap density of MOS devices are reduced by a proper PIII treatment. At an identical EOT, the leakage current of devices with PIII nitridation can be reduced by about three orders of magnitude. The optimal process conditions for PIII treatment include nitrogen incorporation through metal gate, ion energy of 2.5 keV, and implantation time of 15 min. © 2009 Elsevier B.V. All rights reserved.