Abstract
Both plan-view and cross-sectional transmission electron microscopy were applied to study the annihilation of end-of-range (EOR) defects by silicide formation. Co, Ni, Pd, Pt, Cr, Mo, W and Ti thin films were deposited on B + , BF 2 + , As + , P + and Si + implanted silicon. The distance between the silicide/Si interface and the location of the original a/c interface and/or EOR defects, annealing temperature and time, complexity of defects, and proximity of EOR defects to the sample surface were found to be important factors for the complete removal of EOR defects by silicide formation. Mechanisms for the annihilation of EOR defects by silicide formation are discussed. © 1989.