摘要
A special technique to electrically measure submicrometer isolated features is described. By incorporating a large number of features in a single test structure, a gain in precision of better than 3 nm can be shown analytically. The interpreted contact hole diameter as well as the area of the isolated features were found to be accurate when compared with physical measurements using a scanning electron microscope. The special test pattern, an analytic expression for interpretation of the results, and hole size data from a variety of exposure dosages are included. © 1989 IEEE