摘要
In this article, the authors report the fabrication and characterization of quasivertical GaN p-i-n diodes with a 3 μm I-layer grown on different sizes of patterned sapphire substrates (PSSs). The diodes were characterized by current-voltage, capacitance-voltage, and deep-level transient spectroscopy. The PIN diodes grown on the smaller-size PSS showed a reverse breakdown voltage of ∼610 V and a defect concentration of 1.0 × 10 16 cm -3 , both of which are superior to the corresponding measurements of ∼410 V and 1.4 × 10 17 cm -3 for the diodes grown on the larger-size PSS. These results indicate that the GaN PIN diodes grown on smaller-size PSS have a better quality of epitaxial layers than those grown on larger-size PSS.