摘要
Effects of high-k gate stacks and plasma treatments on electrical and reliability characteristics of FinFET were comprehensively studied in this work. A higher on-current, higher on-/off-current ratio, smaller subthreshold swing (S.S.), lower gate leakage current, and better reliability characteristics in FinFETs are simultaneously achieved by a HfO&null gate stack. The improvement can be attributed to its higher k-value, fewer oxide traps, and oxygen vacancy in gate stack. A higher on-current of FinFET can be obtained with an F-based plasma treatment, which, however, also induces a larger gate leakage current. A plasma treatment with F- and N-based ambient on gate stack is shown to obtain a higher on-current and acceptable gate leakage in FinFET. Furthermore, a larger on-current, higher on-/off-current ratio, and a smaller S.S. in FinFET can be achieved with a TiO&null stacked gate dielectric.