Abstract
To continuously improve device performance with the shrinkage of device dimension, some novel devices like fully depleted silicon-on-insulator and symmetric double-gate transistor have been proposed. Various Hf x Ta y Si z N metal gate electrodes were developed in this paper to achieve work function near the midgap and excellent thermal stability. Furthermore, this paper also demonstrated a good metal gate candidate, Hf 0.19 Ta 0.41 Si 0.26 N 0.14 , possessing excellent electrical performances in hysteresis effect, interface trap density, stress-induced leakage current, and excellent thermal stability as well. © 2008 IEEE.