Abstract
In this letter, electrical characteristics of nanolaminate Al 2 O 3 /TiO 2 /Al 2 O 3 on p-GaN MOS capacitor with and without PMA and (NH 4 ) 2 S X treatments were investigated. I-V and C-V characteristics were improved by both PMA and (NH 4 ) 2 S X treatments. The leakage-current densities can be improved to 3.0 × 10 -8 and 2.2 × 10 -8 A/cm 2 at ± V, respectively. Almost an ideal C-V curve, the effective dielectric constant of 12.1 and the averaged D it value of 4.3 × 10 11 eV -1 · cm -2 were obtained. © 2009 IEEE.