摘要
Electrical characteristics of Ge buried channel FinFETs with interfacial layer (IL) treated by CF 4 , NH 3 , and H 2 plasma were studied in this work. Although Ge buried channel and plasma treatments on ILs have been reported, their applications on FinFETs are not seen. Experimental results show that higher on-current and on/off current ratio of FinFETs are achieved by CF 4 plasma treatment owing to higher fraction of the tetragonal HfO 2 . FinFETs with NH 3 and H 2 plasma treatments show smaller subthreshold swing values and better reliability characteristics. The improvement may be attributed to the ILs with good quality.