摘要
Electrical and reliability properties of ultrathin La 2 O 3 gate dielectric have been investigated. The measured capacitance of 33 angstrom La 2 O 3 gate dielectric is 7.2 μF/cm 2 that gives an effective K value of 27 and an equivalent oxide thickness of 4.8 angstrom. Good dielectric integrity is evidenced from the low leakage current density of 0.06 A/cm 2 at -1 V, high effective breakdown field of 13.5 MV/cm, low interface-trap density of 3 × 10 10 eV -1 /cm 2 , and excellent reliability with more than 10 years lifetime even at 2 V bias. In addition to high K, these dielectric properties are very close to conventional thermal SiO 2 .