Abstract
We have analyzed the electrical properties of both SiO x on InGaAs and SiN x on InGaAs, by utilizing a metal-insulator-semiconductor (MIS) structure. For improving film or interface quality, both oxide and nitride samples underwent furnace annealing (FA) in hydrogen at various temperatures. From the leakage current and capacitance characterization, we found that the electrical properties of the nitride samples such as leakage current, injected charges, and interface trap density are improved by FA, while on the contrary, the properties of the oxide samples are slightly deteriorated. The optimum annealing temperature for nitride samples is in the temperature range of ∼400 to 450°C. Also, by secondary ion mass spectroscopy (SIMS) analysis, we provide evidence of inter-diffusion occurring in the oxide samples after annealing.