Abstract
Two-dimensional porous silicon structures were modeled as two-dimensional directional site percolated networks (2D-DSPNs). In the present work, the 2D-DSPNs were modeled as resistive networks, and the electrical conductance values were numerically calculated. The effects of porosity and geometrical connection on the electrical conduction behavior were isolated and identified. It was shown that the geometrical connection of 2D-DSPNs makes the conduction behavior distinctly different from that in traditional random networks. A geometry anisotropic random walk model was developed to microscopically understand the macroscopic conduction behavior of 2D-DSPNs. © 1998 American Institute of Physics.