摘要
Heterointerfaces between complex oxides have sparked considerable interest due to their fascinating physical properties and their offering of new possibilities for next-generation electronic devices. The key to realize practical applications is the control through external stimuli. In this study, we take the self-assembled BiFeO 3 -CoFe 2 O 4 tubular interface as a model system to demonstrate the nonvolatile electric control of the local conduction at the complex oxide tubular interface. The fundamental mechanism behind this modulation was explored based on static and dynamic conductive atomic force microscopies. We found the movement of oxygen vacancies in the BiFeO 3 -CoFe 2 O 4 heterostructure is the key to drive this intriguing behavior. This study delivers a possibility in developing next-generation electronic devices. © 2013 American Chemical Society.