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Electrical properties and degradation phenomena of glass-doped ZnO chip varistors
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Electrical properties and degradation phenomena of glass-doped ZnO chip varistors

J.N. Lin, C.M. Lin, C.C. KaoW.C. Chang
Materials Science and Engineering B, 卷.20(3), 頁碼.261-265
07/1993

摘要

Materials Science (all) Condensed Matter Physics Mechanics of Materials Mechanical Engineering
Several glass additives with compositions in the PbOB 2 O 3 ZnOSiO 2 system were applied to multilayer type ZnO ceramic chip varistors which had been manufactured using the ceramic green-sheet lamination technique. Measurements of capacitance-voltage (C-V), current voltage (I-V) and degradation behavior, as well as microstructural observations, were performed. It was found that specimens into which the above-mentioned glasses were incorporated had good surgewithstanding capability, with the exception of samples including ZnBSi glass. The electrical properties of speciments deteriorated gradually with increasing glass content. The addition of glasses improved the thermal stability of ZnO varistors except for G4 glass-doped sample (60 w/oPbO-12 w/oB 2 O 3 -605w/oZnO). Stable varistors with good nonlinearity parameters were obtained by combining the glass compositions and other additives. © 1993.

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