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Electrically Sign-Reversible Topological Hall Effect in a Top-Gated Topological Insulator (Bi,Sb)2Te3 on a Ferrimagnetic Insulator Europium Iron Garnet
Journal article   Peer reviewed

Electrically Sign-Reversible Topological Hall Effect in a Top-Gated Topological Insulator (Bi,Sb)2Te3 on a Ferrimagnetic Insulator Europium Iron Garnet

Phys. Rev. B 109, 024432 (2024).
2024

Abstract

Topological Hall Effect

The topological Hall effect (THE), an electrical transport signature of systems with chiral spin textures like

skyrmions, has been observed recently in topological insulator (TI)-based magnetic heterostructures. The

strong spin-orbit coupling and the broken spatial inversion symmetry in such heterostructures could lead to

a sizable interfacial Dzyaloshinsky-Moriya interaction, favorable for skyrmion formation and pronounced

THE. However, the intriguing interplay between the topological surface state (TSS) and THE is yet to be fully

understood. In thiswork, we report an unprecedentedly large THE signal of ∼10 (∼4 μ cm at 2 K) with an

electrically reversiblesign in a top-gated 4 nm TI (Bi0.3Sb0.7 )2Te3 (BST) grown on a ferrimagnetic insulator

(FI) europium iron garnet(EuIG). The dependence of THE on temperature, external magnetic field angle, and

gate bias was investigated and is consistent with the prediction of a skyrmion-driven THE, amenable to

elucidate the origin of THE that occurred in TI-based heterostructures. Moreover, a sign change in THE was

discovered as the Fermi level  was tuned electrically from the upper (electron-doped region) to the lower

parts (hole-doped region) of the gapped BST Dirac cone and vice versa. We show that the exploitation of

the TSS features has led to a sign-reversal of THE repeatedly in a TI/FI top-gate stack. This discovery may

impact technological applications in  ultralow power skyrmion-based spintronics.

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