Abstract
This paper presents the investigations on the p-type conduction of the phosphorus-implanted CdTe single crystals. Previous theoretical calculations predicted the existence of large amounts of phosphorus interstitials in the as-implanted and thermally annealed samples and the elimination of these defects in the pulse electron-beam-annealed samples, which is confirmed in this work by the electron paramagnetic resonance measurements. This shows the significant effect of melting crystals in the pulse electron-beam annealing process on obtaining high carrier concentrations.