摘要
The process to form Ti germanide on P-implanted Ge (2 &null) with low contact resistivity (&null) was developed. Sequential deposition of Ti and TiN on n-Ge without annealing leads to rectifying I-V characteristic due to Fermi level pinning (FLP). With 600 &null, Ohmic-like I-V behavior was achieved due to Ti germanide (C54 phase included) formation that depins Fermi level and makes &null of 1.5 &null &null Schottky barrier height for electron (&null) of 0.22 eV. Even for 700 &null annealing, the Ti germanide exhibits comparable &null and good thermal stability without agglomeration which is a concern of NiGe. By adopting additional P implantation after germanide, &null d4BNcan be further improved to 3.6 &null &null 0.17 eV, respectively. The improvement is ascribed to the enhanced dopant segregation at the germanide/Ge interface that results in stronger dipoles and more significantly reduced &null and &null The Ti germanide process paves a promising path to enable next-generation Ge technology.