摘要
Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation, and chemical vapor deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by ∼40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of Te4 at low temperatures and depend weakly on carrier density â̂n - 12, evidence for enhancement of the energy loss rate due to disorder in CVD samples. © 2013 American Physical Society.