摘要
Instead of employing post metal annealing (PMA), post deposition annealing (PDA) was proposed to crystalize HfZrO&null (HZO) into the ferroelectric phase on an epitaxial Ge film with higher reliability. Due to the absence of top electrode/HZO reaction during annealing, PDA-processed HZO intrinsically possesses a better capability to control the amount of oxygen vacancies ( <formula> <tex>$V_{o}$</tex> </formula> ). It is physically and electrically confirmed that the amount of <formula> <tex>$V_{o}$</tex> </formula> for the PDA-HZO is suppressed by 10.3&null Due to fewer <formula> <tex>$V_{o}$</tex> </formula> , the PDA-based device shows a higher switching speed than the counterpart by a factor of 12. By integration with an AlON interfacial layer, the PDA-based device reveals superior reliability performance to that by PMA in terms of robust endurance of 10&null cycles, stable retention up to ten years, and smaller imprint. In addition, the PDA process also leads to enhanced remanent polarization ( <formula> <tex>$P_{r}$</tex> </formula> ) uniformity among devices by 61.3&null due to reduced grain size. Furthermore, additional thermal annealing after metal deposition hardly affects the devices' performance, implying that the PDA process can be integrated with a subsequent dopant activation annealing to implement ferroelectric field-effect transistors (FeFETs) and pave a viable way to advance the development of high-reliability Ge-based FeFET memory.