Abstract
A low temperature (LT=77 K) processing technique was used for Schottky metal deposition on InGaAs. The Schottky barrier height of Ag/InGaAs contact processed at low temperature was found to be 0.64 eV. This value is more than two times higher than that of the barrier height of 0.30 eV obtained from the sample processed at room temperature (RT). The enhanced Schottky contacts are superior for the application on high performance semiconductor photodetectors. The currentvoltage-temperature (I-V-T) measurements were conducted to study the current transport mechanism. Atomic force microscope was used to study the surface morphology correlating with the electrical properties. The LT metal showed cracked structure, which combined by islands, while the RT metal surface appeared to be more uniform with some sharp dots. © 1998 American Vacuum Society.