摘要
In order to improve electrical characteristics of FinFETs, various annealing treatments for dopant activation were studied in this work. The treatments including rapid thermal annealing (RTA), microwave annealing, and RTA-and-laser annealing with different powers were investigated. The on-current and carrier mobility of FinFET are significantly improved by a RTA-and-laser annealing with suitable power; meanwhile, the leakage current, interface characteristics and device reliability can be simultaneously maintained. The improvement can be attributed to the high thermal activation energy, less dopant diffusion, and enhanced quality of interfacial layer during the gate first processes. Therefore, a RTA-and-laser annealing with suitable power is promising for manufacturing high performance FinFET.