Abstract
Enhanced growth of CoSi 2 on epitaxial Si 0.7 Ge 0.3 has been achieved with an interposing amorphous-Si (a-Si) layer. The a-Si layer was used as a sacrificial layer to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming CoSi 2 on Si 0.7 Ge 0.3 grown by molecular beam eptiaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices. © 2002 American Institute of Physics.