摘要
Heavy nitrogen doping of TiO2 thin films has been achieved by ion-beam-assisted deposition. The heavily doped films have a distorted anatase crystal structure and show an increase in visible-light absorption compared to films with only light nitrogen doping. The enhanced absorption is shown by a first-principles density-functional calculation to result from an electronic band-gap narrowing, in contrast to the appearance of isolated N 2p states above the valence-band maximum that occur with light nitrogen doping.