Abstract
The characteristics of sputtered Pt Ox electrodes and the ferroelectric reliability of Pb (Zr0.4 Ti0.6) O3 (PZT) thin-film capacitors for memory application in relation to the oxygen content in the electrodes were investigated. The PZT thin films of 130 nm thickness were deposited on Pt Ox electrodes. Both Pt and PtO phases coexist and a compressive stress is also induced in the electrode after rapid thermal annealing (RTA) at 600°C. The polarization-switching characteristics, including polarization value and switching rate of PZT capacitor, are improved by using the Pt Ox as electrodes, especially for the bottom electrode, in comparison to that made with Pt electrodes. In addition to the enhancement in polarization-switching characteristics, the properties of fatigue endurance were tested at room temperature. High fatigue endurance (97% of initial remnant polarization remains after 1010 cycles) can also be achieved for the capacitors having both top and bottom electrodes made with Pt Ox having a high oxygen content. © 2006 The Electrochemical Society.