Enhancement of C-49 to C-54 TiSi2 phase transformation on (001)Si with an ultrathin TiN seed layer

Y.C. Peng; L.J. Chen; W.Y. Hsieh; Y.R. Yang; Y.F. Hsieh

doi:10.1016/S0169-4332(98)00671-0

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Enhancement of C-49 to C-54 TiSi2 phase transformation on (001)Si with an ultrathin TiN seed layer

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Enhancement of C-49 to C-54 TiSi2 phase transformation on (001)Si with an ultrathin TiN seed layer

Y.C. Peng, L.J. Chen, W.Y. Hsieh, Y.R. Yang and Y.F. Hsieh

Applied Surface Science, Vol.142(1), pp.336-340

04/1999

DOI: https://doi.org/10.1016/S0169-4332(98)00671-0

Abstract

An ultrathin TiN seed layer was used to reduce the transformation temperature of C-49 to C-54 TiSi ₂ . The fine-grained structure of C-49 TiSi ₂ was induced by the interposing TiN layer. Since C-54 TiSi ₂ nucleated more easily at the grain boundaries of fine-grained C-49 structure, the phase transformation temperature was reduced.

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Title: Enhancement of C-49 to C-54 TiSi2 phase transformation on (001)Si with an ultrathin TiN seed layer
Creators - without role: Y.C. Peng - Dept. of Mat. Sci. and Engineering , National Tsing Hua University
L.J. Chen - National Tsing Hua University
W.Y. Hsieh - United Microelectronics (Taiwan)
Y.R. Yang - United Microelectronics Corporation
Y.F. Hsieh - United Microelectronics Corporation
Publication Details: Applied Surface Science, Vol.142(1), pp.336-340
Identifiers: 9957771451106774
Academic Unit: Department of Materials Science and Engineering, College of Engineering, National Tsing Hua University
Language: English
Resource Type: Journal article

Enhancement of C-49 to C-54 TiSi2 phase transformation on (001)Si with an ultrathin TiN seed layer

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