Enhancement of Oxide Break-Up by Implantation of Fluorine in Poly-Si Emitter Contacted p+ -n Shallow Junction Formation

Shye Lin Wu; Chung Len Lee; Tan Fu Lei; C.F. Chen; L.J. Chen; K.Z. Ho; Y.C. Ling

doi:10.1109/55.285410

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Enhancement of Oxide Break-Up by Implantation of Fluorine in Poly-Si Emitter Contacted p+ -n Shallow Junction Formation

Journal article

Peer reviewed

Enhancement of Oxide Break-Up by Implantation of Fluorine in Poly-Si Emitter Contacted p+ -n Shallow Junction Formation

Shye Lin Wu, Chung Len Lee, Tan Fu Lei, C.F. Chen, L.J. Chen, K.Z. Ho and Y.C. Ling

IEEE Electron Device Letters, Vol.15(4), pp.120-122

1994

DOI: https://doi.org/10.1109/55.285410

Abstract

Electronic

Optical and Magnetic Materials

Electrical and Electronic Engineering

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device.

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Title: Enhancement of Oxide Break-Up by Implantation of Fluorine in Poly-Si Emitter Contacted p+ -n Shallow Junction Formation
Translated title: Enhancement of Oxide Break-Up by Implantation of Fluorine in Poly-Si Emitter Contacted p+ -n Shallow Junction Formation
Creators - without role: Shye Lin Wu - National Yang Ming Chiao Tung University
Chung Len Lee - National Yang Ming Chiao Tung University
Tan Fu Lei - National Yang Ming Chiao Tung University
C.F. Chen - National Tsing Hua University
L.J. Chen - National Tsing Hua University
K.Z. Ho - Department of Materials Science and Engineering, National Tsing Hua University
Y.C. Ling - National Tsing Hua University
Publication Details: IEEE Electron Device Letters, Vol.15(4), pp.120-122
Identifiers: 9957769332906774
Academic Unit: Department of Materials Science and Engineering, College of Engineering, National Tsing Hua University
Language: English
Resource Type: Journal article

Enhancement of Oxide Break-Up by Implantation of Fluorine in Poly-Si Emitter Contacted p+ -n Shallow Junction Formation

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