- 題名
- Enhancing FeFET Memory Reliability via Switching Mechanism Control by Compositionally Gradient-Stacked Hf 1-x Zr x O 2 Films
- 創作者：
- Sheng-Yen Zheng - Department of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanWei-Ning Kao - Department of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanYung-Hsien Wu - Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan
- 學術資源類型
- 期刊文章
- 出版日期
- 05/2025
- 出版資訊
- IEEE electron device letters, 卷.46(5), 頁碼.737-740
- 語言
- 英語
期刊文章
Enhancing FeFET Memory Reliability via Switching Mechanism Control by Compositionally Gradient-Stacked Hf 1-x Zr x O 2 Films
IEEE electron device letters, 卷.46(5), 頁碼.737-740
05/2025
指標
1 檢視次數