Abstract
Recent Progress in the epitaxial growth of refractory metal sillicides on silicon is reviewd. The formation and structures of epitaxial silicides are described. The lattice match criteria for the growth of epitaxial sillicide are assessed. The effects of anharmonicity in the interatomic force of overlayer on the heteroepitaxial growth and pseudomorphism are discussed. Factors affecting the sillicide epitaxy are study of epitaxial sillicides are addressed.