摘要
Epitaxial growth of NiSi 2 on (111)Si inside 0.1-0.6 μm oxide openings prepared by electron beam lithography has been studied by field emission scanning electron microscopy, transmission electron microscopy, and thin-film stress measurement. Striking effects of size and shape of deep submicron oxide openings on the growth of NiSi 2 epitaxy were observed. Epitaxial growth of NiSi 2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside contact holes of 0.2 μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi 2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi 2 on (111)Si are correlated with the stress level inside oxide openings. © 1996 American Institute of Physics.